Tunable photoelectrochemical properties of chalcopyrite AgInS 2 nanoparticles size-controlled with a photoetching technique

Journal of Physical Chemistry C

Volumn 116, Issue 41, 2012, Pages 21895-21902

  Torimoto, Tsukasa ^a   Tada, Masaki ^a   Dai, Meilin ^a   Kameyama, Tatsuya ^a   Suzuki, Shushi ^a,b   Kuwabata, Susumu ^b,c  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; ANODIC PHOTOCURRENTS; CHEMICAL COMPOSITIONS; CONDUCTION BAND EDGE; MONOCHROMATIC IRRADIATION; N-TYPE SEMICONDUCTORS; ONSET POTENTIAL; PHOTO-ETCHING; PHOTOELECTROCHEMICAL MEASUREMENTS; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOETCHING TECHNIQUE; POSITIVE SHIFT; QUANTUM SIZE EFFECTS; SIZE CONTROL; SIZE DEPENDENCE; SIZE-SELECTIVE PHOTOETCHING; VALENCE BAND EDGES;

COPPER COMPOUNDS; NANOPARTICLES; PARTICLE SIZE;

ELECTROCHEMISTRY;

EID: 84867487168     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp307305q     Document Type: Article

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