SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 25, 2010, Pages 5319-5324

Preparation and photoelectrochemical properties of densely immobilized Cu2ZnSnS4 nanoparticle films

(7) Kameyama, Tatsuya a Osaki, Takaaki a Okazaki, Ken Ichi a Shibayama, Tamaki b Kudo, Akihiko c Kuwabata, Susumu d,e Torimoto, Tsukasa a,e

a NAGOYA UNIVERSITY (Japan)

b HOKKAIDO UNIVERSITY (Japan)

c TOKYO UNIVERSITY OF SCIENCE (Japan)

d OSAKA UNIVERSITY (Japan)

e JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; AQUEOUS SOLUTIONS; CATHODIC PHOTOCURRENT; CONDUCTION BAND EDGE; CROSS LINKING AGENTS; CRYSTAL PHASE; ELECTRON SCAVENGERS; HIGH TEMPERATURE; KEY FACTORS; LAYER BY LAYER DEPOSITION; METAL ACETATE; NANOPARTICLE FILMS; OLEYLAMINE; ONSET POTENTIAL; P TYPE SEMICONDUCTOR; PARTICLE FILMS; PHOTO-ELECTRODES; PHOTOELECTROCHEMICAL PROPERTIES; PHOTORESPONSES; QUARTZ GLASS SUBSTRATES; REACTION TEMPERATURE; SECONDARY PHASE; THERMAL REACTIONS; TOXIC ELEMENTS; VALENCE BAND EDGES;

CROSSLINKING; DEPOSITION; ELECTRON MOBILITY; EUROPIUM; NANOPARTICLES; OXIDE MINERALS; QUARTZ; SUBSTRATES; SULFUR; SYNTHESIS (CHEMICAL);

ITO GLASS;

EID: 77953589793 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm00454e Document Type: Article

Times cited : (137)

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