Photoelectrochemical performances of AgInS2 film electrodes fabricated using the sulfurization of AgIn metal precursors

Solar Energy Materials and Solar Cells

Volumn 95, Issue 7, 2011, Pages 1859-1866

  Cheng, Kong Wei ^a,b   Liu, Po Hung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NONE   (Taiwan)

Author keywords

AgInS2; Optical property; Photoelectrode; Thin film

Indexed keywords

AG/AGCL; AGINS2; APPLIED BIAS; CONDUCTION TYPE; DIRECT BAND GAP; FILM ELECTRODES; HIGH QUALITY; METAL PRECURSOR; MOLAR RATIO; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOELECTROCHEMICALS; PHOTOELECTRODE; POLYCRYSTALLINE; VARIOUS SUBSTRATES;

CARRIER CONCENTRATION; CARRIER MOBILITY; DIFFRACTION; ELECTROCHEMISTRY; INDIUM SULFIDE; METALS; SILVER; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 79955474698     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.02.008     Document Type: Article

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