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Volumn 37, Issue 20, 2012, Pages 4200-4202

Infrared dielectric properties of low-stress silicon nitride

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FUNCTIONS; DIELECTRIC PARAMETERS; HIGH-PERFORMANCE CIRCUITS; LOW STRESS; SILICON NITRIDE THIN FILMS; TRANSMITTANCE SPECTRA;

EID: 84867475425     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.37.004200     Document Type: Article
Times cited : (106)

References (19)
  • 10
    • 84893885455 scopus 로고    scopus 로고
    • Addison Engineering 150 Nortech Parkway, San Jose, California 95134 (Orientation h100i, Czochralski, p-type B doped, bulk resistivity < 0.005 Ω cm
    • Addison Engineering, 150 Nortech Parkway, San Jose, California 95134 (Orientation h100i, Czochralski, p-type B doped, bulk resistivity < 0.005 Ω cm).
  • 11
    • 0001623967 scopus 로고
    • K. J. Button, ed. (Academic Part I
    • F. Gervais, in Infrared and Millimeter Waves, K. J. Button, ed. (Academic, 1983), Vol. 8, Part I, pp. 284-287.
    • (1983) Infrared and Millimeter Waves , vol.8 , pp. 284-287
    • Gervais, F.1
  • 14
    • 0001859637 scopus 로고
    • L. C. W. Dixon and G. P. Szergo, eds. North-Holland
    • M. C. Biggs, in Towards Global Optimization, L. C. W. Dixon and G. P. Szergo, eds. (North-Holland, 1975), pp. 341-349.
    • (1975) Towards Global Optimization , pp. 341-349
    • Biggs, M.C.1
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.