Ultra-low-noise MoCu transition edge sensors for space applications

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Goldie, D J ^a   Velichko, A V ^a   Glowacka, D M ^a   Withington, S ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CRITICAL TEMPERATURES; CUT OUT; DARK NOISE; DYNAMICAL SIMULATION; ELECTRICAL INPUT IMPEDANCE; ELECTRO-THERMAL MODEL; ELEMENT ARRAY; GROUND BASED; HEAT BATH; HIGHLY SENSITIVE; JOHNSON NOISE; LOW NOISE; LOW-NOISE OPERATIONS; MATERIAL PARAMETER; READOUT NOISE; SILICON NITRIDE MEMBRANE; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE; THEORETICAL LIMITS; THERMAL CONDUCTANCE; TRANSITION-EDGE SENSORS;

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; SENSORS; SHELLFISH; SILICON NITRIDE; SILICON WAFERS; SPACE APPLICATIONS; THERMOGRAPHY (IMAGING); TIME DIVISION MULTIPLE ACCESS;

SQUIDS;

EID: 79955736393     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561432     Document Type: Article

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