High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs

2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Volumn , Issue , 2011, Pages

  Lee, K W ^a   Bea, J C ^a   Fukushima, T ^a   Ohara, Y ^a   Tanaka, T ^a   Koyanagi, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

3D LSI; Capacitance time (C t); Charge carrier lifetime; Cu diffusion; Cu TSV

Indexed keywords

3D LSI; ACTIVE AREA; BARRIER LAYERS; C-T CURVE; CAPACITANCE-TIME (C-T); CU ATOMS; CU DIFFUSION; DEVICE RELIABILITY; EVALUATION RESULTS; GATE TRENCHES; GENERATION LIFETIME; HIGH RELIABILITY; HIGH RELIABLE; MINORITY CARRIER; TRENCH CAPACITORS;

CAPACITANCE; CAPACITORS; CHARGE CARRIERS;

RELIABILITY;

EID: 84866867341     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2012.6262975     Document Type: Conference Paper

References (7)

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