Colloidal synthesis and electrical properties of GeSe nanobelts

Chemistry of Materials

Volumn 24, Issue 18, 2012, Pages 3643-3649

  Vaughn, Dimitrid ^a   Sun, Du ^a   Levin, Scott M ^b   Biacchi, Adam J ^a   Mayer, Theresa S ^a,b   Schaak, Raymond E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

GeSe; IV VI semiconductors; nanobelts; one dimensional nanostructures

Indexed keywords

ABSORPTION EDGES; ALTERNATIVE MATERIALS; ASSEMBLY PROCESS; AVERAGE DIAMETER; BUILDING BLOCKES; CHALCOGENIDE SEMICONDUCTORS; COLLOIDAL SYNTHESIS; CURRENT-VOLTAGE MEASUREMENTS; DIFFUSE REFLECTANCE SPECTROSCOPY; ELECTRICAL APPLICATIONS; ELECTRONIC DEVICE; ELECTRONIC MATERIALS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GESE; HEXAMETHYLDISILAZANE; INDIRECT BAND GAP; MORPHOLOGICAL DIVERSITY; NANO-STRUCTURED; NARROW BAND GAP; OLEYLAMINE; ONE-DIMENSIONAL NANOSTRUCTURE; ONE-POT REACTION; PHOTOVOLTAICS; RAPID NUCLEATION; RESISTIVITY VALUES; SELECTED AREA ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY TEM;

ATOMIC FORCE MICROSCOPY; DIGITAL LIBRARIES; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; ENERGY GAP; OLEIC ACID; PHOTOVOLTAIC CELLS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

NANOBELTS;

EID: 84866686666     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm3023192     Document Type: Article

References (45)

1. Yoon, S. M.; Song, H. J.; Choi, H. C. Adv. Mater. 2010, 22, 2164
2. Vaughn, D. D., II; Patel, R. J.; Hickner, M. A.; Schaak, R. E. J. Am. Chem. Soc. 2010, 132, 15170
3. Cai, J. S.; Wang, C. R.; Xu, J.; Wang, H. Y.; Xu, X. F.; Chen, X. S.; Chu, J. H. CrystEngComm 2011, 13, 2734
4. Zhang, Y. J.; Li, H.; Jiang, L.; Liu, H. B.; Shu, C. Y.; Li, Y. L.; Wang, C. R. Appl. Phys. Lett. 2011, 98, 113118
5. Lezal, D.; Pedlikova, J.; Zavadil, J. J. Optoelectron. Adv. Mater. 2004, 6, 133
6. Brauhaus, D.; Schindler, C.; Bottger, U.; Waser, R. Thin Solid Films 2008, 516, 1223
7. Wiedemeier, H.; Schnering, H. G. V. Z. Kristallogr. 1978, 148, 295
8. Elkorashy, A. M. Phys. Status Solidi B 1986, 135, 707
9. Elkorashy, A. M. Phys. Status Solidi B 1989, 152, 249
10. Antunez, P. D.; Buckley, J. J.; Brutchey, R. L. Nanoscale 2011, 3, 2399
11. Tang, J.; Kemp, K. W.; Hoogland, S.; Jeong, K. S.; Liu, H.; Levina, L.; Furukawa, M.; Wang, X. H.; Debnath, R.; Cha, D. K.; Chou, K. W.; Fischer, A.; Amassian, A.; Asbury, J. B.; Sargent, E. H. Nat. Mater. 2011, 10, 765
12. Kramer, I. J.; Sargent, E. H. ACS Nano 2011, 5, 8506
13. Fu, H. Y.; Tsang, S. W. Nanoscale 2012, 4, 2187
14. Hillhouse, H. W.; Beard, M. C. Curr. Opin. Colloid Interface Sci. 2009, 14, 245
15. Solanki, G. K.; Deshpande, M. P.; Agarwal, M. K.; Patel, P. D.; Vaidya, S. N. J. Mater. Sci. Lett. 2003, 22, 985
16. Kügeler, C.; Rosezin, R.; Linn, E.; Bruchhaus, R.; Waser, R. Appl. Phys. A: Mater. Sci. Process. 2011, 102, 791
17. Zakery, A.; Elliott, S. R. J. Non-Cryst. Solids 2003, 330, 1
18. Zhao, L. J.; Hu, L. F.; Fang, X. S. Adv. Funct. Mater. 2012, 22, 1551
19. Li, Y.; Qian, F.; Xiang, J.; Lieber, C. M. Mater. Today 2006, 9, 18
20. Utama, M. I. B.; Zhang, J.; Chen, R.; Xu, X.; Li, D.; Sun, H.; Xiong, Q. Nanoscale 2012, 4, 1422
21. Liu, X.; Long, Y. Z.; Liao, L.; Duan, X. F.; Fan, Z. Y. ACS Nano 2012, 6, 1888
22. Long, Y. Z.; Yu, M.; Sun, B.; Gu, C. Z.; Fan, Z. Y. Chem. Soc. Rev. 2012, 41, 4560
23. Hobbs, R. G.; Petkov, N.; Holmes, J. D. Chem. Mater. 2012, 24, 1975
24. Law, M.; Goldberger, J.; Yang, P. Annu. Rev. Mater. Sci. 2004, 34, 83
25. Feigel, I. M.; Vedala, H.; Star, A. J. Mater. Chem. 2011, 21, 8940
26. Hecht, D. S.; Hu, L. B.; Irvin, G. Adv. Mater. 2011, 23, 1482
27. Hochbaum, A. I.; Yang, P. D. Chem. Rev. 2010, 110, 527
28. Zhai, T. Y.; Li, L.; Ma, Y.; Liao, M. Y.; Wang, X.; Fang, X. S.; Yao, J. N.; Bando, Y.; Golberg, D. Chem. Soc. Rev. 2011, 40, 2986
29. Espinosa, H. D.; Bernal, R. A.; Minary-Jolandan, M. Adv. Mater. 2012, 24 (34) 4656-4675
30. Tian, M.; Wang, J.; Zhang, Q.; Kumar, N.; Mallouk, T. E.; Chan, M. H. W. Nano Lett. 2009, 9, 3196
31. Kuno, M. Phys. Chem. Chem. Phys. 2008, 10, 620
32. Hobbs, R. G.; Barth, S.; Petkov, N.; Zirngast, M.; Marschner, C.; Morris, M. A.; Holmes, J. D. J. Am. Chem. Soc. 2010, 132, 13742
33. Smith, P. A.; Nordquist, C. D.; Jackson, T. N.; Mayer, T. S. Appl. Phys. Lett. 2000, 77, 1399
34. Smith, B. D.; Mayer, T. S.; Keating, C. D. Annu. Rev. Phys. Chem. 2012, 63, 12.1
35. Li, M.; Bhiladvala, R. B.; Morrow, T.; Sioss, J.; Lew, K.-K.; Redwing, J. M.; Keating, C. D.; Mayer, T. S. Nat. Nano 2008, 3, 88
36. Hanrath, T.; Korgel, B. A. J. Phys. Chem. B 2005, 109, 5518
37. Barth, S.; Kolesnik, M. M.; Donegan, K.; Krstic, V.; Holmes, J. D. Chem. Mater. 2011, 23, 3335
38. Hohman, J. N.; Kim, M.; Bednar, H. R.; Lawrence, J. A.; McClanahan, P. D.; Weiss, P. S. Chem. Sci. 2011, 2, 1334
39. Johnson, O. H. Chem. Rev. 1952, 51, 431
40. Park, J.; Joo, J.; Kwon, S. G.; Jang, Y.; Hyeon, T. Angew. Chem., Int. Ed. 2007, 46, 4630
41. Hagfeldt, A.; Gratzel, M. Chem. Rev. 1995, 95, 49
42. Schroder, D. K. Semiconductor Material and Device Characterization; Wiley-Interscience: Hoboken, NJ, 2006; pp 342-343.
43. Onodera, A.; Sakamoto, I.; Fujii, Y.; Mori, N.; Sugai, S. Phys. Rev. B 1997, 56, 7935
44. Bhatia, K. L.; Parthasarathy, G.; Gosain, D. P.; Gopal, E. S. R. Phys. Rev. B 1986, 33, 1492
45. Ishihaba, Y.; Nakada, I. Phys. Stat. Sol. (B) 1981, 105, 285