Analysis of the effect of boron doping on GeTe phase change memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Sandhya, C ^a   Bastard, A ^a   Perniola, L ^a   Bastien, J C ^a   Toffoli, A ^a   Henaff, E ^a   Roule, A ^a   Persico, A ^a   Hyot, B ^a   Sousa, V ^a   De Salvo, B ^a   Reimbold, G ^a  

^a STMICROELECTRONICS   (France)

Author keywords

Boron doping; Endurance; Growth dominated crystallization; MLC; Phase change memories; RESET; SET

Indexed keywords

B-DOPING; BORON-DOPED; BORON-DOPING; ELECTRICAL BEHAVIORS; ENDURANCE RELIABILITY; MLC; PHASE CHANGES; RESET; RESET CURRENTS; SET;

DURABILITY; RELIABILITY;

PHASE CHANGE MEMORY;

EID: 84866633732     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241873     Document Type: Conference Paper

References (10)

1. R. Annunziata, P. Zuliani, M. Borghi, G. De Sandre, L. Scotti, C. Prelini, M. Tosi, I. Tortorelli, F. Pellizzer, "Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond", IEEE Electron Device Mtg., pp. 97-100, 2009.
2. L, Perniola, V. Sousa, A. Fantini, E. Arbaoui, A. Bastard, M. Armand, A. Fargeix, C.Jahan,; J.-F.Nodin,; A. Persico, D. Blachier, A. Toffoli,; S. Loubriat, E.Gourvest, G. Betti Beneventi, H. Feldis, S. Maitrejean, S. Lhostis, A. Roule, O. Cueto, G. Reimbold, L. Poupinet, T. Billon, B. De Salvo, D. Bensahel, P. Mazoyer, R. Annunziata, P. Zuliani, F.Boulanger, "Electrical Behavior of Phase-Change Memory Cells Based on GeTe", IEEE Electron Device Letts., v.31, no. 5, pp.488-490, 2010.
3. V. Sousa, L. Perniola, G. Navarro, N. Pashkov, M. Suri, A. Persico, E. Henaff, F. Fillot, F. Pierre, A. Roule, S. Maitrejean, H. Feldis, C. Jahan, J. F. Nodin, A. Toffoli, D. Blachier, A. Bastard*, J-C. Bastien, B. Hyot, B. André, G. Reimbold, B. De Salvo, O. Faynot, P. Zuliani, R. Annunziata, "GeTe-based Phase Change Memories: Effect of stoechiometric variations and N or C addition", EPCOS 2011.
4. W. Czubatyj, S.J. Hudgens, C. Dennison, C. Schell, T. Lowrey, "Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention", IEEE Electron Device Letts., v.31, no. 8, pp.869-871, 2010.
5. C. Sandhya, A. Bastard, P. Noe, J.C. Bastien, A. Toffoli, E. Henaff, A. Roule, A. Persico, F. Fillot, O. Renault, X. Biquard, G. Servanton, F. Pierre, B. Hyot, L. Perniola, V. Sousa, B. De Salvo, G. Reimbold, S. Maitrejean, "Study of GeTe with Boron doping for Phase Change Memory Applications", Accepted for Materials Research Symposium, Spring meeting 2012.
6. Y. H. Shih, J. Y. Wu, B. Rajendran, M. H. Lee, R. Cheek, M. Lamorey, M. Breitwisch, Y. Zhu, E. K. Lai, C. F. Chen, E. Stinzianni, A. Schrott, E. Joseph, R. Dasaka, S. Raoux, H.L. Lung, C. Lam, IEEE Electron Device Mtg., pp.1-4, 2008.
7. H. Huang, L. Zhang, Y. Wang, X. D. Han, Y. Wu, Z. Zhang, F. Gan, "Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power", Journal of Alloys and Compounds, v.509, pp.5050-5054, 2011.
8. G. F. Zhou H.J. Borg, J.C.N. Rijpers, andM. Lankhorst, "Crystallization behavior of phase change materials: Comparison between nucleation-and growth-dominated crystallization", Proc. SPIE 4090, pp.74-78, 2000.
9. S. Braga, N. Pashkov, L. Perniola, A. Fantini, A. Cabrini, G. Torelli, V. Sousa, B. De Salvo and G. Reimbold, "Effects of Alloy Composition on Multilevel Operation in Self-Heating Phase Change Memories", IEEE Intl. Memory Workshop, pp.127-130, 2011
10. A. Bastard, J. C. Bastien, B. Hyot, S. Lhostis, F. Mompiou, C. Bonafos, G. Servanton, C. Borowiak, F. Lorut, N. Bicais-Lepinay, A. Toffoli, C. Sandhya, A. Fantini, L. Perniola, E. Gourvest, S. Maitrejean, A. Roule, V. Sousa, D. Bensahel, and B. André, "Crystallization study of 'melt quenched' amorphous GeTe by transmission electron microscopy for phase change memory applications", Appl. Phys. Lett., v.99, pp.243103 (1-3), 2011.