Mechanical strength and reliability of a novel thin monocrystalline silicon solar cell

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Xu, Dewei ^a   Ho, Paul S ^a   Rao, Rajesh A ^b   Mathew, Leo ^b   Smith, Scott ^b   Saha, Sayan ^b   Sarkar, Dabraj ^b   Vass, Curt ^b   Jawarani, Dharmesh ^b  

^a The University of Texas at Austin   (United States)

^b AstroWatt Inc   (United States)

Author keywords

cell process temperature limit; energy release rate; mechanical strength; reliability; stress intensity factor; thermal misfit strain; Thin crystalline silicon solar cells

Indexed keywords

BI-MATERIAL; CELL PROCESS; CELL PROCESSING; CLOSED FORM; CRYSTALLINE SILICON SOLAR CELLS; DEVICE LAYERS; EXFOLIATION PROCESS; FRACTURE ANALYSIS; FRACTURE BEHAVIOR; HIGH CONVERSION EFFICIENCY; MATERIAL COST; MECHANICAL ANALYSIS; MISFIT STRAINS; MODULE INTEGRATION; PROCESSING TEMPERATURE; PYRAMID STRUCTURE; RESIDUAL STRAINS; SILICON LAYER; SURFACE-TEXTURING; THERMAL STRESS FIELD; THIN FILM SOLAR CELLS; THIN SILICON FILMS; WAFER TRANSFERS;

CRYSTALLINE MATERIALS; ENERGY RELEASE RATE; INTERFACES (MATERIALS); MONOCRYSTALLINE SILICON; PROCESSING; RELIABILITY; SILICON SOLAR CELLS; SILICON WAFERS; STRENGTH OF MATERIALS; STRESS INTENSITY FACTORS;

SUBSTRATES;

EID: 84866617302     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241827     Document Type: Conference Paper

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