A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

Journal of Semiconductors

Volumn 33, Issue 9, 2012, Pages

  Dhasade, S S ^a   Han, S H ^b   Fulari, V J ^a  

^a SHIVAJI UNIVERSITY   (India)

^b Hanyang University   (South Korea)

Author keywords

chemical composition; copper telluride; electrodeposition; optical properties; quantum dots

Indexed keywords

BAND GAP ENERGY; CHEMICAL COMPOSITIONS; COMPOSITIONAL ANALYSIS; DEPOSITED FILMS; DEPOSITION TIME; ELECTRODEPOSITION METHODS; ELECTROLYTE CONCENTRATION; NANOSTRUCTURED COPPER; OPTICAL BAND GAP ENERGY; POTENTIOSTATIC ELECTRODEPOSITION; ROOM TEMPERATURE; SPECTRA PROPERTIES;

COPPER; OPTICAL CONSTANTS; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION;

ELECTRODEPOSITION;

EID: 84866549293     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/33/9/093002     Document Type: Article

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