Oxidation resistance of reactive atoms in graphene

Nano Letters

Volumn 12, Issue 9, 2012, Pages 4651-4655

  Chisholm, Matthew F ^a   Duscher, Gerd ^a,b   Windl, Wolfgang ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b University of Tennessee Knoxville   (United States)

^c Ohio State University   (United States)

Author keywords

aberration correction; ADF imaging; Graphene; impurity oxidation

Indexed keywords

ABERRATION-CORRECTION; AMORPHOUS CARBON LAYER; CATALYTIC APPLICATIONS; FIRST-PRINCIPLES CALCULATION; GRAPHENE LAYERS; H-PASSIVATION; IMPURITY ATOMS; KINETIC EFFECT; REACTIVE ELEMENTS; ROOM TEMPERATURE; SMALL CLUSTERS;

AMORPHOUS CARBON; ATOMS; OXIDATION RESISTANCE; OXYGEN;

GRAPHENE;

NANOMATERIAL; OXYGEN;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; OXIDATION REDUCTION REACTION; PARTICLE SIZE; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; OXIDATION-REDUCTION; OXYGEN; PARTICLE SIZE;

EID: 84866342537     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl301952e     Document Type: Article

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