Black silicon with controllable macropore array for enhanced photoelectrochemical performance

Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

  Ao, Xianyu ^a,b   Tong, Xili ^a   Kim, Dong Sik ^a   Zhang, Lianbing ^a   Knez, Mato ^a,c,d   Müller, Frank ^a   He, Sailing ^e,f   Schmidt, Volker ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

^c BASQUE FOUNDATION FOR SCIENCE   (Spain)

^d CIC NANOGUNE   (Spain)

^e ZHEJIANG UNIVERSITY   (China)

^f Zijingang Campus ^*  (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK SILICON; ETCHING PROCESS; LIGHT-TRAPPING; MACRO POROUS SILICON; MACROPORE ARRAYS; METAL CONTAMINATION; MULTISCALES; NANO-STRUCTURED; P-N JUNCTION; PHOTOANODE; PHOTOCATALYTIC WATER SPLITTING; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICAL PERFORMANCE; REFLECTION SUPPRESSION; TIO; VACUUM FACILITY;

ATOMIC LAYER DEPOSITION; TITANIUM DIOXIDE;

POROUS SILICON;

EID: 84866342487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752231     Document Type: Article

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