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Volumn 24, Issue 39, 2012, Pages

Reactive force field potential for carbon deposition on silicon surfaces

(7) Briquet, Ludovic G V a Jana, Arindam a Mether, Lotta b Nordlund, Kai b Henrion, Gérard c Philipp, Patrick a Wirtz, Tom a

a LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (Luxembourg)

b UNIVERSITY OF HELSINKI (Finland)

c CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOND-ORDER POTENTIAL; CARBON ATOMS; CARBON DEPOSITION; CHANNELLING EFFECT; DEPOSITION CONDITIONS; DYNAMIC CHARGES; FORCE FIELDS; FORMATION ENERGIES; INCIDENCE ANGLES; INTERATOMIC POTENTIAL; MD SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; REACTIVE FORCE FIELD; RUNNING-IN; SILICON SURFACES; STICKING COEFFICIENTS; SURFACE NORMALS; THIRD-ORDER;

CHARGE TRANSFER; MOLECULAR DYNAMICS; POINT DEFECTS; SILICON CARBIDE;

CARBON;

EID: 84866252455 PISSN: 09538984 EISSN: 1361648X Source Type: Journal
DOI: 10.1088/0953-8984/24/39/395004 Document Type: Article

Times cited : (14)

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