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Volumn 518, Issue 18, 2010, Pages 5355-5361
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Simulation at high temperature of atomic deposition, islands coalescence, Ostwald and inverse Ostwald ripening with a general simple kinetic Monte Carlo code
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Author keywords
Deposition; Island formation; Kinetic Monte Carlo; Ostwald ripening; Simulation
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Indexed keywords
ATOMIC DEPOSITION;
COMPUTATIONAL TIME;
ELEVATED TEMPERATURE;
HIGH TEMPERATURE;
INCIDENT PARTICLES;
INVERSE OSTWALD RIPENING;
ISLAND FORMATION;
KINETIC MONTE CARLO;
KINETIC MONTE CARLO MODEL;
NUCLEATION AND GROWTH;
SIMULATION;
THERMALLY DRIVEN;
TIME EVOLUTIONS;
COALESCENCE;
DEPOSITION;
MONTE CARLO METHODS;
OSTWALD RIPENING;
PALLADIUM;
SILICON COMPOUNDS;
THREE DIMENSIONAL;
ATOMS;
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EID: 77955655186
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.04.064 Document Type: Article |
Times cited : (62)
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References (20)
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