Improvement of the repulsive part of the classical interatomic potential for SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 18-23

  Belko, V ^a   Posselt, M ^b   Chagarov, E ^b,c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c Arizona State University   (United States)

Author keywords

Computer simulations; Interatomic potential; Molecular dynamics; SiC

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; DEFECTS; ELECTRONS; ION BEAMS; PROBABILITY DENSITY FUNCTION; SILICON CARBIDE;

INTERATOMIC POTENTIAL;

MOLECULAR DYNAMICS;

EID: 0037379103     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01825-6     Document Type: Conference Paper

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