Influence of SiN x:H film properties according to gas mixture ratios for crystalline silicon solar cells

Current Applied Physics

Volumn 13, Issue 1, 2013, Pages 241-245

  Lee, Kyung Dong ^a   Dahiwale, S S ^a   Kim, Young Do ^a   Lee, Jong Han ^a   Kim, Seongtak ^a   Bae, Soohyun ^a   Park, Sungeun ^a   Tark, Sung Ju ^a   Kim, Donghwan ^a  

^a Korea University   (South Korea)

Author keywords

Field effect; Gas mixture; Optical property; Passivation; Silicon nitride; Silicon solar cells

Indexed keywords

ANTI-REFLECTION; CRYSTALLINE SILICON SOLAR CELLS; FABRICATION SEQUENCE; FIELD EFFECTS; FILM PROPERTIES; FIRING PROCESS; HIGH QUALITY SURFACE; HIGH-TEMPERATURE FIRING; HYDROGENATED SILICON; LARGE-AREA SUBSTRATES; MIXTURE RATIO; NITRIDE SURFACE; PASSIVATION LAYER; PASSIVATION PROPERTIES; PHOTOVOLTAIC INDUSTRY; SINGLE CRYSTALLINE SILICON; SURFACE LAYERS; SURFACE PASSIVATION;

ANTIREFLECTION COATINGS; CHEMICAL ANALYSIS; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; GAS MIXTURES; HYDROGENATION; OPTICAL PROPERTIES; OPTIMIZATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SILICON SOLAR CELLS;

ELECTRIC PROPERTIES;

EID: 84866135216     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.07.017     Document Type: Article

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