Blue emission by interstitial site occupation of Ce 3+ in AlN

Chemistry of Materials

Volumn 24, Issue 17, 2012, Pages 3486-3492

  Liu, Tzu Chen ^a   Kominami, Hiroko ^b   Greer, Heather F ^c   Zhou, Wuzong ^c   Nakanishi, Yoichiro ^b   Liu, Ru Shi ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

field emission display; interstitial site; nitride phosphor

Indexed keywords

ACCELERATING VOLTAGES; ALN; BLUE EMISSION; CELL PARAMETER; CHROMATICITY COORDINATES; ELECTRON BOMBARDMENTS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GAS-PRESSURE SINTERING; HIGH BRIGHTNESS; IN-FIELD; INTERSTITIAL SITES; IONIC SIZES; NITRIDE PHOSPHOR; NITROGEN ATMOSPHERES; OCTAHEDRAL INTERSTITIAL SITE; RARE EARTH IONS; SOLID-STATE NUCLEAR MAGNETIC RESONANCE; WURTZITE STRUCTURE;

ENERGY DISPERSIVE SPECTROSCOPY; FIELD EMISSION DISPLAYS; IONS; LIGHT EMISSION; NITRIDES; NITROGEN; PHOSPHORS; RIETVELD REFINEMENT; SILICON; SINTERING; TELEVISION STANDARDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

ALUMINUM NITRIDE;

EID: 84866086822     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm301979y     Document Type: Article

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