Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 379-382

  Sato, Ayumu ^a   Azumada, Kyoko ^a   Atsumori, Toshiyuki ^a   Hara, Kazuhiko ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Phosphors; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM NITRIDE; ATMOSPHERIC PRESSURE; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; LATTICE CONSTANTS; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORS;

CRYSTALLINE QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; LUMINESCENT PROPERTIES; PHOTOLUMINESCENCE SPECTRUM;

THIN FILMS;

EID: 33846463805     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.042     Document Type: Article

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