메뉴 건너뛰기




Volumn 2, Issue , 2012, Pages

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84866067604     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00587     Document Type: Article
Times cited : (52)

References (32)
  • 1
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • DOI 10.1038/nmat2023, PII NMAT2023
    • Waser, R. & Aono, M. Nanoionics-based resistive switching memories. NatMater 6, 833-840 (2007). (Pubitemid 350064191)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 2
    • 35348846979 scopus 로고
    • Ferroelectric memories
    • Scott, J. F. & Araujo, C. A. P. D. Ferroelectric Memories. Science 246, 1400-1405 (1989).
    • (1989) Science , vol.246 , pp. 1400-1405
    • Scott, J.F.1    Araujo, C.A.P.D.2
  • 3
    • 73649141715 scopus 로고    scopus 로고
    • Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
    • Lee, S., Kim, H., Yun, D.-J., Rhee, S.-W. & Yong, K. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. Appl.Phys. Lett. 95, 262113 (2009).
    • (2009) Appl.Phys. Lett , vol.95 , pp. 262113
    • Lee, S.1    Kim, H.2    Yun, D.-J.3    Rhee, S.-W.4    Yong, K.5
  • 4
    • 84859206837 scopus 로고    scopus 로고
    • Observation of conducting filament growth in nanoscale resistive memories
    • Yang, Y. et al. Observation of conducting filament growth in nanoscale resistive memories. Nat Commun 3, 732 (2012).
    • Nat Commun , vol.3 , Issue.732 , pp. 2012
    • Yang, Y.1
  • 5
    • 65149104934 scopus 로고    scopus 로고
    • Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film
    • Joonhyuk, C. et al. Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film. Nanotechnology 20, 175704 (2009).
    • (2009) Nanotechnology , vol.20 , pp. 175704
    • Joonhyuk, C.1
  • 7
    • 53849108825 scopus 로고    scopus 로고
    • Spin memristive systems: Spin memory effects in semiconductor spintronics
    • Pershin, Y. V. & Di Ventra, M. Spin memristive systems: Spin memory effects in semiconductor spintronics. Phys. Rev. B 78, 113309 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 113309
    • Pershin, Y.V.1    Di Ventra, M.2
  • 8
    • 33646667897 scopus 로고
    • Ab initio study of piezoelectricity and spontaneous polarization in ZnO
    • Dal Corso, A., Posternak, M., Resta, R. & Baldereschi, A. Ab initio study of piezoelectricity and spontaneous polarization in ZnO. Phys. Rev. B 50, 10715 (1994).
    • (1994) Phys. Rev B , vol.50 , pp. 10715
    • Dal Corso, A.1    Posternak, M.2    Resta, R.3    Baldereschi, A.4
  • 9
    • 0000400057 scopus 로고
    • Ab initio study of the spontaneous polarization of pyroelectric BeO
    • Posternak, M., Baldereschi, A., Catellani, A. & Resta, R. Ab initio study of the spontaneous polarization of pyroelectric BeO. Phys. Rev. Lett. 64, 1777-1780 (1990).
    • (1990) Phys. Rev. Lett , vol.64 , pp. 1777-1780
    • Posternak, M.1    Baldereschi, A.2    Catellani, A.3    Resta, R.4
  • 11
    • 79953795108 scopus 로고    scopus 로고
    • Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO
    • Herng, T. S. et al. Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO. Adv. Mater. 23, 1635-1640 (2011).
    • (2011) Adv. Mater , vol.23 , pp. 1635-1640
    • Herng, T.S.1
  • 12
    • 0042658274 scopus 로고    scopus 로고
    • Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition
    • Wang, X. S., Wu, Z. C., Webb, J. F. & Liu, Z. G. Ferroelectric and dielectric properties of Li-doped ZnO thin films prepared by pulsed laser deposition. Appl. Phys. A 77, 561-565 (2003).
    • (2003) Appl. Phys A , vol.77 , pp. 561-565
    • Wang, X.S.1    Wu, Z.C.2    Webb, J.F.3    Liu, Z.G.4
  • 13
    • 34250666295 scopus 로고    scopus 로고
    • V51 ionic displacement induced ferroelectric behavior in Vdoped ZnO films
    • Yang, Y. C. et al. V51 ionic displacement induced ferroelectric behavior in Vdoped ZnO films. Appl.Phys. Lett. 90, 242903-242901 (2007).
    • (2007) Appl.Phys. Lett , vol.90 , pp. 242903-242901
    • Yang, Y.C.1
  • 14
    • 56849131587 scopus 로고    scopus 로고
    • Pseudoferroelectricity: A possible scenario for doped ZnO
    • Tagantsev, A. K. Pseudoferroelectricity: A possible scenario for doped ZnO. Appl. Phys. Lett. 93, 202905-202903 (2008).
    • (2008) Appl. Phys. Lett , vol.93 , pp. 202905-202903
    • Tagantsev A., .K.1
  • 15
    • 37849036348 scopus 로고    scopus 로고
    • Effects of interfacial layer structures on crystal structural properties of ZnO films
    • Park, J. S. et al. Effects of interfacial layer structures on crystal structural properties of ZnO films. J. Vac. Sci. Technol. A 26, 90-96 (2008).
    • (2008) J. Vac. Sci. Technol A , vol.26 , pp. 90-96
    • Park, J.S.1
  • 16
    • 70350167233 scopus 로고    scopus 로고
    • Bipolar resistance switching in fully transparent ZnO:Mg-based devices
    • Shi, L., Shang, D. S., Sun, J. R. & Shen, B. G. Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices. Appl. Phys. Express 2, 101602 (2009).
    • (2009) Appl. Phys. Express , vol.2 , pp. 101602
    • Shi, L.1    Shang, D.S.2    Sun, J.R.3    Shen, B.G.4
  • 17
    • 25144462707 scopus 로고    scopus 로고
    • A comprehensive review of ZnO materials and devices
    • Ozgur, U. et al. A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301-041103 (2005).
    • (2005) J. Appl. Phys , vol.98 , pp. 041301-041103
    • Ozgur, U.1
  • 18
    • 80055086062 scopus 로고    scopus 로고
    • Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles
    • Shi, L. et al. Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles. J. Phys. D: Appl. Phys. 44, 455305 (2011).
    • (2011) J. Phys D: Appl. Phys , vol.44 , pp. 455305
    • Shi, L.1
  • 19
    • 0032615031 scopus 로고    scopus 로고
    • Ferroelectricity in thin perovskite films
    • Tybell, T., Ahn, C. H. & Triscone, J.-M. Ferroelectricity in thin perovskite films. Appl. Phys. Lett. 75, 856-858 (1999). (Pubitemid 129307172)
    • (1999) Applied Physics Letters , vol.75 , Issue.6 , pp. 856-858
    • Tybell, T.1    Ahn, C.H.2    Triscone, J.-M.3
  • 20
    • 33746851949 scopus 로고    scopus 로고
    • Quantitative mapping of switching behavior in piezoresponse force microscopy
    • Jesse, S., Lee, H. N. & Kalinin, S. V. Quantitative mapping of switching behavior in piezoresponse force microscopy. Rev. Sci. Instrum. 77, 073702 (2006).
    • (2006) Rev. Sci. Instrum , vol.77 , pp. 073702
    • Jesse, S.1    Lee, H.N.2    Kalinin, S.V.3
  • 22
    • 33846529954 scopus 로고    scopus 로고
    • Atomic structures and electrical properties of ZnO grain boundaries
    • DOI 10.1111/j.1551-2916.2006.01481.x
    • Sato, Y., Yamamoto, T. & Ikuhara, Y. Atomic Structures and Electrical Properties of ZnO Grain Boundaries. J. Am. Ceram. Soc. 90, 337-357 (2007). (Pubitemid 46160477)
    • (2007) Journal of the American Ceramic Society , vol.90 , Issue.2 , pp. 337-357
    • Sato, Y.1    Yamamoto, T.2    Ikuhara, Y.3
  • 25
    • 60749107172 scopus 로고    scopus 로고
    • Conduction at domain walls in oxide multiferroics
    • Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nat. Mater. 8, 229-234 (2009).
    • (2009) Nat. Mater , vol.8 , pp. 229-234
    • Seidel, J.1
  • 26
    • 79961196902 scopus 로고    scopus 로고
    • Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors
    • Eliseev, E. A., Morozovska, A. N., Svechnikov, G. S., Gopalan, V. & Shur, V. Y. Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors. Phys. Rev. B 83, 235313 (2011).
    • (2011) Phys. Rev. B , vol.83 , pp. 235313
    • Eliseev, E.A.1    Morozovska, A.N.2    Svechnikov, G.S.3    Gopalan, V.4    Shur, V.Y.5
  • 27
    • 0000620927 scopus 로고
    • Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling
    • Wang, Y. & Perdew, J. P. Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling. Phys. Rev. B 44, 13298 (1991).
    • (1991) Phys. Rev B , vol.44 , pp. 13298
    • Wang, Y.1    Perdew, J.P.2
  • 28
    • 0000216001 scopus 로고
    • Accurate spin-dependent electron liquid correlation energies for local spin density calculations: A critical analysis
    • Vosko, S. H., Wilk, L. & Nusair, M. Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis. Can. J. Phys. 58, 1200-1211 (1980).
    • (1980) Can. J. Phys , vol.58 , pp. 1200-1211
    • Vosko, S.H.1    Wilk, L.2    Nusair, M.3
  • 29
    • 0011236321 scopus 로고    scopus 로고
    • From ultrasoft pseudopotentials to the projector augmented-wave method
    • Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 1758
    • Kresse, G.1    Joubert, D.2
  • 30
    • 1842816907 scopus 로고
    • Special points for Brillouin-zone integrations
    • Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
    • (1976) Phys. Rev. B , vol.13 , pp. 5188
    • Monkhorst, H.J.1    Pack, J.D.2
  • 31
    • 3442886901 scopus 로고    scopus 로고
    • Inversion domain and stacking mismatch boundaries in GaN
    • Northrup, J. E., Neugebauer, J. & Romano, L. T. Inversion domain and stacking mismatch boundaries in GaN. Phys. Rev. Lett. 77, 103-106, doi:10.1103/ PhysRevLett.77.103 (1996). (Pubitemid 126623971)
    • (1996) Physical Review Letters , vol.77 , Issue.1 , pp. 103-106
    • Northrup, J.E.1    Neugebauer, J.2    Romano, L.T.3
  • 32
    • 1842564148 scopus 로고    scopus 로고
    • Inversion domain boundaries in ZnO: Firstprinciples total-energy calculations
    • Yan, Y. F. & Al-Jassim, M. M. Inversion domain boundaries in ZnO: Firstprinciples total-energy calculations. Phys. Rev. B 69, 085204 (2004).
    • (2004) Phys. Rev. B , vol.69 , pp. 085204
    • Yan, Y.F.1    Al-Jassim, M.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.