V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films

Applied Physics Letters

Volumn 90, Issue 24, 2007, Pages

  Yang, Y C ^a   Song, C ^a   Zeng, F ^a   Pan, F ^a   Xie, Y N ^b   Liu, T ^b  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HYSTERESIS LOOPS; POLARIZATION; SPECTRUM ANALYSIS; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY; ZINC OXIDE;

DISPLACEMENT-VOLTAGE CURVES; FERROELECTRIC BEHAVIOR; IONIC DISPLACEMENTS;

FERROELECTRIC FILMS;

EID: 34250666295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748081     Document Type: Article

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