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Applied Physics Letters

Volumn 101, Issue 10, 2012, Pages

C 60-based hot-electron magnetic tunnel transistor

(6) Gobbi, M a Bedoya Pinto, A a Golmar, F a,b Llopis, R a Casanova, F a,c Hueso, L E a,c

a CIC NANOGUNE (Spain)

b INTI CONICET (Argentina)

c BASQUE FOUNDATION FOR SCIENCE (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MEASUREMENT; ENERGY LEVEL ALIGNMENT; MAGNETIC FIELD SENSORS; MAGNETIC TUNNEL TRANSISTORS;

PHYSICAL PROPERTIES; PHYSICS;

HOT ELECTRONS;

EID: 84866015206 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4751030 Document Type: Article

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.