Chemical vapor deposition of 12C isotopically enriched polycrystalline diamond

Japanese Journal of Applied Physics

Volumn 51, Issue 9, 2012, Pages

  Teraji, Tokuyuki ^a   Taniguchi, Takashi ^a   Koizumi, Satoshi ^a   Watanabe, Kenji ^a   Liao, Meiyong ^a   Koide, Yasuo ^a   Isoya, Junichi ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC DIRECTIONS; HIGH-CRYSTALLINE QUALITY; ISOTOPIC ENRICHMENT; ISOTOPICALLY ENRICHED; LOW BACKGROUND; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; NITROGEN CONTENT; POLYCRYSTALLINE DIAMONDS; PREFERENTIAL ORIENTATION; RAMAN PEAK; RECOMBINATION EMISSION; ROOM TEMPERATURE; SUBSTRATE PLANES;

CHEMICAL VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION;

SYNTHETIC DIAMONDS;

EID: 84865836252     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.090104     Document Type: Article

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