Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond

Diamond and Related Materials

Volumn 23, Issue , 2012, Pages 109-111

  Kato, Yukako ^a   Umezawa, Hitoshi ^a   Shikata, Shin Ichi ^a   Teraji, Tokuyuki ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Diamond; Dislocation; Local stress; Power device; Raman microscope

Indexed keywords

CHEMICAL VAPOR; CONFOCAL RAMAN MICROSCOPES; FLAT SURFACES; HIGH QUALITY CRYSTALS; HOMOEPITAXIAL; LOCAL STRESS; LOCAL STRESS DISTRIBUTION; LOW DEFECT DENSITIES; OPTICAL PHONONS; PEAK SHIFT; POWER DEVICES; RAMAN MICROSCOPE; SINGLE CRYSTAL DIAMOND;

DIAMONDS; ELECTRIC EQUIPMENT; STRESS CONCENTRATION;

DISLOCATIONS (CRYSTALS);

EID: 84863407755     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2012.01.024     Document Type: Article

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