Self-aligned Ni-P ohmic contact scheme for silicon solar cells by electroless deposition

Electronic Materials Letters

Volumn 8, Issue 4, 2012, Pages 391-395

  Lee, Eun Kyung ^a   Lim, Dong Chan ^a   Lee, Kyu Hwan ^a   Lim, Jae Hong ^a  

^a Korea Institute of Material Science   (South Korea)

Author keywords

Ni P metallization scheme; Ni silicides; silicon solar cells; specific contact resistance

Indexed keywords

4-POINT PROBE; AMBIENT AIR; ANNEALING PROCESS; CIRCULAR TRANSMISSION LINE; CRYSTAL PROPERTIES; GLANCING ANGLE X-RAY DIFFRACTIONS; LOW RESISTANCE; NI-P METALLIZATION SCHEME; NI-SILICIDES; RESISTIVITY MEASUREMENT; SELF-ALIGNED; SPECIFIC CONTACT RESISTANCES; THERMAL ANNEALING PROCESS; THERMAL-ANNEALING;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; METALLIZING; OHMIC CONTACTS; PHOTOELECTRONS; SILICIDES; SILICON; SILICON SOLAR CELLS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING;

EID: 84865814499     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-2015-0     Document Type: Article

References (24)

1. M. W. Denhoff and N. Drolet, Sol. Energy Mater. Sol. Cells93, 1499 (2009).
2. M.-J. Kim, J.-D. Lee, M.-J. Kim, and S.-H. Lee, J. Kor. Phys. Soc. 24, 328 (2011).
3. V. A. Chaudhari and C. S. Solanki, Sol. Energy Mater. Sol. Cells9, 2094 (2010).
4. C. Boulord, A. Kaminski, Y. Veschetti, and M. Lemiti, Mater. Sci. Eng.: B165, 53 (2009).
5. C. Boulord, A. Kaminski, B. Canut, S. Cardinal, and M. Lemiti, J. Elec. Chem. Soc. 157, H742 (2010).
6. H. Knauss, B. Terheiden, and P. Fath, Sol. Energy Mater. Sol. Cells90, 3232 (2006).
7. E. J. Lee, D. S. Kim, and S. H. Lee, Sol. Energy Mater. Sol. Cells74, 65 (2002).
8. V. S. Miles and H. E. John, J. Elec. Chem. Soc. 104, 226 (1957).
9. M. Kohler, Etching in Microsystem Technology, p. 283, WILEYVCH, Weinheim, Germany (1999).
10. M. A. T. Lenio, A. J. Lennon, A. Ho-Baillie, and S. R. Wenham, Sol. Energy Mater. Sol. Cells94, 2102 (2010).
11. A. O. A. Ohta, H. Yoshinaga, H. Murakami, D. Azuma, Y. Munetaka, S. Higashi, S. Miyazaki, T. Aoyama, K. Kosaka, and K. Shibahara, International Conference of Solid State of Device and Materials, p. 216, Yokohama, Japan (2006).
12. G. S. Marlow and M. B. Das, Solid-State Electronics25, 91 (1982).
13. A. J. Willis and A. P. Botha, Thin Solid Films146, 15 (1987).
14. A. R. M. M. Hilali and B. To, Proceedings of the 14th Workshop on Crystalline Silicon Solar Cells and Modules, p. 254, Winter Park, CO, USA (2004).
15. P. Peeters, G. V. D. Hoorn, T. Daenen, A. Kurowski, and G. Staikov, Electrochim. Acta47, 161 (2001).
16. D. Kanama, S. T. Oyama, S. Otani, and D. F. Cox, Surf. Sci. 552, 8 (2004).
17. H. W. Nesbitt, D. Legrand, and G. M. Bancroft, Phys. Chem. Miner. 27, 357 (2000).
18. N. S. McIntyre and M. G. Cook, Anal. Chem. 47, 2208 (1975).
19. D. Mangelinck, J. Y. Dai, J. S. Pan, and S. K. Lahiri, Appl. Phys. Lett. 75, 1736 (1999).
20. S. Y. Tan, C.-W. Chen, I. T. Chen, and C.-W. Feng, Thin Solid Films517, 1186 (2008).
21. E. Bucher, S. Schulz, M. C. Lux-Steiner, P. Munz, U. Gubler, and F. Greuter, Appl. Phys. A40, 71 (1986).
22. J. Chastain, Handbook of X-Ray Photoelectron Spectroscopy, p. 84, Perkin-Elmer Corporation, Minnesota (1992).
23. A. Kaminski, J. J. Marchand, and A. Laugier, Sol. Stat. Elec. 43, 741 (1999).
24. M. Wolf and H. Rauschenbach, Adv. En. Conv. 3, 455 (1963).