170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits

Optics Express

Volumn 20, Issue 18, 2012, Pages 20090-20095

  Rouvalis, E ^a   Chtioui, M ^b   Van Dijk, F ^b   Lelarge, F ^b   Fice, M J ^a   Renaud, C C ^a   Carpintero, G ^c   Seeds, A J ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b CEA LETI   (France)

^c UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DIODES; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; PHOTODIODES; PHOTONIC INTEGRATION TECHNOLOGY; SEMICONDUCTOR QUANTUM WELLS;

HIGH BANDWIDTH; MONOLITHIC INTEGRATION; OUTPUT POWER; PHOTONIC INTEGRATED CIRCUITS; RESPONSIVITY; UNI-TRAVELING CARRIER PHOTODIODE;

PHOTONIC DEVICES;

INDIUM; INDIUM PHOSPHIDE; PHOSPHINE DERIVATIVE;

ARTICLE; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INSTRUMENTATION; MICROWAVE RADIATION; PHOTOMETRY; RADIATION EXPOSURE; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; MICROWAVES; PHOSPHINES; PHOTOMETRY; SEMICONDUCTORS;

EID: 84865721654     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.020090     Document Type: Article

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