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Journal of Luminescence

Volumn 132, Issue 12, 2012, Pages 3125-3128

Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

(5) Tsuji, Takahiro a Terai, Yoshikazu a Kamarudin, Muhammad Hakim Bin a Yoshida, Kazuki a Fujiwara, Yasufumi a

a OSAKA UNIVERSITY (Japan)

Author keywords

Eu; Lifetime; MOCVD; Photoluminescence; Rare earth doped semiconductors; ZnO

Indexed keywords

BAND EDGE; CONCENTRATION QUENCHING; LIFETIME; MODEL-BASED OPC; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; RARE EARTH DOPED; RED EMISSIONS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; THERMAL QUENCHING; ZNO;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUENCHING; VAPORS; ZINC OXIDE;

EUROPIUM;

EID: 84865690428 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2011.12.042 Document Type: Conference Paper

Times cited : (31)

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