Trap level characteristics of rare-earth luminescence centers in III-V semiconductors

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 4330-4334

  Taguchi, Akihito ^a   Takahei, Kenichiro ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000342405     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361741     Document Type: Article

References (19)

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