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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2834-2836

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition

(5) Terai, Y a Yamaoka, K a Yoshida, K a Tsuji, T a Fujiwara, Y a

a OSAKA UNIVERSITY (Japan)

Author keywords

Rare earth doped semiconductor

Indexed keywords

BAND GAP ENERGY; DIRECT EXCITATION; DOPED ZNO; EMISSION LINES; ENERGY LEVEL; HIGH ENERGY; LOW-ENERGY EXCITATIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE EXCITATION SPECTRUM; PHOTOLUMINESCENCE PROPERTIES; PL LIFETIME; PL MEASUREMENTS; PL PROPERTY; ZNO;

ENERGY TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SULFUR COMPOUNDS; ZINC OXIDE;

EUROPIUM;

EID: 77957992302 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2010.03.012 Document Type: Conference Paper

Times cited : (27)

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