General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant

Journal of the American Chemical Society

Volumn 134, Issue 34, 2012, Pages 14019-14026

  Zhou, Weiwei ^a   Zhan, Shutong ^a   Ding, Lei ^a   Liu, Jie ^a  

^a DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ETCHING EFFECT; FEEDING RATE; HIGH GROWTH; HIGH SELECTIVITY; IN-SITU; METALLIC NANOTUBES; QUARTZ SUBSTRATE; SELECTIVE GROWTH; SEMI-CONDUCTING NANOTUBES; WATER CONCENTRATIONS;

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; NANOTUBES; QUARTZ; SILICON WAFERS;

SEMICONDUCTOR GROWTH;

SILICON DIOXIDE; SINGLE WALLED NANOTUBE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CHEMICAL REACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SYNTHESIS; WATER VAPOR;

EID: 84865620167     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja3038992     Document Type: Article

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