High performance miniaturized InSb photovoltaic infrared sensors operating at room temperature

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 997-1000

  Kuze, N ^a   Camargo, E G ^a   Ueno, K ^a   Morishita, T ^a   Sato, M ^a   Kurihara, M ^a   Endo, H ^a   Ishibashi, K ^a  

^a R and D Center   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices

Indexed keywords

ELECTRIC EXCITATION; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

ANTIMONIDES; PHOTOEXCITED ELECTRONS; PHOTOVOLTAIC INFRARED SENSORS; ROOM TEMPERATURE;

OPTICAL SENSORS;

EID: 33947302400     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.179     Document Type: Article

References (10)

1. Kim J., Kim S., Wu D., Wojkowski J., Xu J., Piotrowski J., Bigan E., and Razeghi M. Appl. Phys. Lett. 67 (1995) 2645
2. Razeghi M. Opto-Electronics Rev. 6 3 (1998) 155
3. Kim J.D., and Razeghi M. Opto-Electronics Rev. 6 3 (1998) 217
4. Ashley T., Dean A.B., Elliott C.T., McConville C.F., Pryce G.J., and Whitehouse C.R. Appl. Phys. Lett. 59 (1991) 1761
5. Elliott C.T., Gordon N.T., Hall R.S., Phillips T.J., Jones C.L., and Best A. J. Electron. Mater. 26 6 (1997) 643
6. Kuze N., Camargo E.G., Ueno K., Kawakami Y., Moriyasu Y., Nagase K., Sato M., Ishibashi K., and Ozaki M. Phys. Status Solidi (c) 3 3 (2006) 431
7. K. Ueno, E.G. Camargo, Y. Kawakami, Y. Moriyasu, K. Nagase, N. Kuze, Mater. Res. Soc. Symp. Proc. Fall Meeting 2005, submitted for publication.
8. Piotrowski J., and Gawron W. Infrared Phys. Technol. 36 (1995) 1045
9. Piotrowski J., and Razeghi M. Proc. SPIE 2397 (1995) 180
10. Camargo E.G., Kuze N., Ueno K., Kawakami Y., Moriyasu Y., Nagase K., Sato M., Endo H., Ishibashi K., and Ozaki M. Proc. SPIE 6189 (2006) 61890Z-1