The effect of hybrid photovoltaic thermal device operating conditions on intrinsic layer thickness optimization of hydrogenated amorphous silicon solar cells

Solar Energy

Volumn 86, Issue 9, 2012, Pages 2673-2677

  Pathak, M J M ^a   Girotra, K ^b   Harrison, S J ^a   Pearce, J M ^a,c  

^a QUEEN S UNIVERSITY   (Canada)

^b ThinSilicon Corporation   (United States)

^c Michigan Technological University   (United States)

Author keywords

Amorphous silicon; Annealing; Photovoltaic thermal hybrid; PVT; Solar thermal; Staebler Wronski effect

Indexed keywords

A-SI:H; ABSORBER MATERIAL; COMMERCIAL PRODUCTIONS; CRYSTALLINE SILICONS; DEFECT STATE; ELECTRICAL PERFORMANCE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); I-LAYER; INTRINSIC LAYER THICKNESS; OPERATING CONDITION; OPERATING TEMPERATURE; PERFORMANCE LOSS; PHOTOVOLTAIC; PHOTOVOLTAIC-THERMAL HYBRID; POWER OUT PUT; PV PERFORMANCE; PVT; SOLAR PHOTOVOLTAICS; SOLAR THERMAL; STAEBLER-WRONSKI EFFECT; SUN ILLUMINATION; TEMPERATURE COEFFICIENT; THERMAL DEVICES; THERMAL PERFORMANCE; THERMAL SYSTEMS;

AMORPHOUS SILICON; ANNEALING; CELLS; COOLING SYSTEMS; CYTOLOGY; HYDROGENATION; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; TEMPERATURE;

SILICON;

ABSORPTION; AMORPHOUS MEDIUM; EXERGY; FUEL CELL; HIGH TEMPERATURE; OPERATIONS TECHNOLOGY; OPTIMIZATION; PERFORMANCE ASSESSMENT; PHOTOVOLTAIC SYSTEM; SILICON; TEMPERATURE EFFECT;

EID: 84865584636     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2012.06.002     Document Type: Article

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