Dark current in silicon photomultiplier pixels: Data and model

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2410-2416

  Pagano, Roberto ^a   Corso, Domenico ^a   Lombardo, Salvatore ^a   Valvo, Giuseppina ^b   Sanfilippo, Delfo Nunzio ^b   Fallica, Giogio ^b   Libertino, Sebania ^a  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Dark count (DC) rate; dark current; gain; silicon photomultiplier (PM) (SiPM); single pixels; temperature

Indexed keywords

ACTIVE AREA; CURRENT BEHAVIORS; CURRENT PULSE; DARK COUNTS; DEPLETION LAYER; GAIN; MINORITY CARRIER; OPERATION TEMPERATURE; OVER-VOLTAGES; SHOCKLEY-READ-HALL; SILICON PHOTOMULTIPLIER; SINGLE PIXEL; THERMAL EMISSION OF CARRIERS;

PHOTOMULTIPLIERS; PIXELS; TEMPERATURE;

DARK CURRENTS;

EID: 84865397066     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2205689     Document Type: Article

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