Understanding dark current in pixels of silicon Photomultipliers

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 265-268

  Pagano, R ^a   Lombardo, S ^a   Libertino, S ^a   Valvo, G ^b   Condorelli, G ^b   Carbone, B ^b   Sanfilippo, D N ^b   Fallica, G ^b  

^a CNR IMM   (Italy)

^b RandD Department   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; CURRENT BEHAVIORS; CURRENT PULSE; DEPLETION LAYER; MINORITY CARRIER; OPERATION TEMPERATURE; OPERATIONAL LIMITS; OVER-VOLTAGES; PHYSICAL MECHANISM; SHOCKLEY-READ-HALL; SILICON PHOTOMULTIPLIER; THERMAL EMISSION OF CARRIERS; VACUUM TUBE;

DARK CURRENTS; PIXELS; SOLID STATE DEVICES;

PHOTOMULTIPLIERS;

EID: 78649937336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618368     Document Type: Conference Paper

References (8)

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