Dark count in single photon avalanche Si detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7598, Issue , 2010, Pages

  Pagano, R ^a,b   Libertino, S ^b   Valvo, G ^c   Condorelli, G ^c   Carbone, B ^c   Piana, A ^c   Mazzillo, M ^c   Sanfilippo, D N ^c   Fallica, G G ^c   Falci, G ^a,d   Lombardo, S ^b,c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c STMICROELECTRONICS   (Italy)

^d CNR   (Italy)

Author keywords

Dark count; Gain; Silicon photomultiplier; Single photon avalanche diode

Indexed keywords

BREAKDOWN VOLTAGE; DARK COUNTS; GAIN VALUES; OPERATION TIME; OPTICAL CHARACTERIZATION; OPTICAL POWER; PHOTON FLUX; SI DETECTORS; SILICON PHOTOMULTIPLIER; SINGLE CELLS; SINGLE PHOTON AVALANCHE DIODE; SINGLE PHOTONS; SINGLE PIXEL; STMICROELECTRONICS; TIME-RESOLVED;

PARTICLE BEAMS; PHOTOMULTIPLIERS; PHOTONS; PIXELS; SEMICONDUCTING SILICON COMPOUNDS;

AVALANCHE DIODES;

EID: 77951565626     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.841996     Document Type: Conference Paper

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