Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 191-196

  Poyai, A ^a,b   Simoen, E ^a   Claeys, C ^a,b   Czerwinski, A ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

CURRENT TRANSIENT; CZOCHRALSKI SILICON; DIFFUSION CURRENT; EPITAXIAL WAFERS; JUNCTION DIODES;

SILICON WAFERS;

EID: 0033871232     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00462-6     Document Type: Article

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