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Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

Radiative recombination model of degenerate semiconductor and photoluminescence properties of 3C-SiC by P and N doping

(7) Wang, Kun a Fang, Xiao Yong a Li, Ya Qin a Yin, Ai Cha a Jin, Hai Bo b Yuan, Jie c Cao, Mao Sheng b

a YANSHAN UNIVERSITY (China)

b BEIJING INSTITUTE OF TECHNOLOGY (China)

c MINZU UNIVERSITY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEGENERATE SEMICONDUCTORS; N-DOPED; N-DOPING; NEAR ULTRAVIOLET; PHOTOLUMINESCENCE EXCITATION; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE PROPERTIES; PL PROPERTY; PL SPECTRA; RADIATIVE RECOMBINATION; RECOMBINATION MODEL; SPECTRAL REGION;

CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; PHOSPHORUS; PHOTOLUMINESCENCE; SILICON;

SILICON CARBIDE;

EID: 84865217240 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742016 Document Type: Article

Times cited : (6)

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