SCOPUS 정보 검색 플랫폼

Volumn 41, Issue 9, 2012, Pages 2345-2349

Effect of the surface morphology of seed and mask layers on InP grown on Si by epitaxial lateral overgrowth

(8) Junesand, Carl a Hu, Chen a Wang, Zhechao a Metaferia, Wondwosen a Dagur, Pritesh a Pozina, Galia b Hultman, Lars b Lourdudoss, Sebastian a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

chemical mechanical polishing (CMP); dislocations; epitaxial lateral overgrowth (ELOG); Heteroepitaxy; hydride vapor phase epitaxy (HVPE); InP; morphology

Indexed keywords

ALUMINUM OXIDES; COLLOIDAL SILICA; CRYSTAL QUALITIES; DOUBLE LINE; EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY; IN-SITU; INP; MASK LAYER; OPTICAL QUALITIES; ROOM TEMPERATURE; SEED LAYER; SODIUM HYPOCHLORITES; TWO-STEP PROCESS;

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CITRIC ACID; COALESCENCE; DISLOCATIONS (CRYSTALS); HYDRIDES; HYDROMETALLURGY; MORPHOLOGY; POLISHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; VAPORS;

EPITAXIAL GROWTH;

EID: 84865210241 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-012-2164-9 Document Type: Article

Times cited : (18)

References (16)

1
- 54849432664
- 10.1002/pssa.200723302
- B Jalali 2008 Phys. Status Solidi (a) 205 2 10.1002/pssa.200723302
- (2008) Phys. Status Solidi (A) , vol.205 , pp. 2
- Jalali, B.¹

2
- 84865261010
- L Liu T Spuesens G Roelkens D Van Thourhout P Regreny P Rojo-Romeo 2010 IEEE Photon. Technol. Lett. 22 17
- (2010) IEEE Photon. Technol. Lett. , vol.22 , pp. 17
- Liu, L.¹ Spuesens, T.² Roelkens, G.³ Van Thourhout, D.⁴ Regreny, P.⁵ Rojo-Romeo, P.⁶

3
- 79953027481
- 10.1007/s00339-010-5999-z
- D Liang DC Chapman Y Li DC Oakley T Napoleone PW Juodawlkis C Brubaker C Mann H Bar O Raday JE Bowers 2011 Appl. Phys. A 103 1 10.1007/s00339-010-5999-z
- (2011) Appl. Phys. A , vol.103 , pp. 1
- Liang, D.¹ Chapman, D.C.² Li, Y.³ Oakley, D.C.⁴ Napoleone, T.⁵ Juodawlkis, P.W.⁶ Brubaker, C.⁷ Mann, C.⁸ Bar, H.⁹ Raday, O.¹⁰ Bowers, J.E.¹¹

4
- 36549100765
- 10.1063/1.343113
- M Sugo N Uchida A Yamamoto T Nishioka M Yamaguchi 1989 J. Appl. Phys. 65 2 10.1063/1.343113
- (1989) J. Appl. Phys. , vol.65 , pp. 2
- Sugo, M.¹ Uchida, N.² Yamamoto, A.³ Nishioka, T.⁴ Yamaguchi, M.⁵

5
- 33846008046
- 10.1109/LED.2006.887932
- S Datta G Dewey JM Fastenau MK Hudait D Loubychev WK Liu M Radosavljevic W Rachmady R Chau 2007 IEEE Electron Device Lett. 28 8 10.1109/LED.2006.887932
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 8
- Datta, S.¹ Dewey, G.² Fastenau, J.M.³ Hudait, M.K.⁴ Loubychev, D.⁵ Liu, W.K.⁶ Radosavljevic, M.⁷ Rachmady, W.⁸ Chau, R.⁹

6
- 0029218916
- 10.1016/0022-0248(94)00549-4
- S Naritsuka T Nishinaga 1995 J. Cryst. Growth 146 1 10.1016/0022-0248(94) 00549-4
- (1995) J. Cryst. Growth , vol.146 , pp. 1
- Naritsuka, S.¹ Nishinaga, T.²

7
- 77949646517
- 10.1016/j.jcrysgro.2009.12.005
- M Deura Y Kondo M Takenaka S Takagi Y Nakano M Sugiyama 2010 J. Cryst. Growth 312 8 10.1016/j.jcrysgro.2009.12.005
- (2010) J. Cryst. Growth , vol.312 , pp. 8
- Deura, M.¹ Kondo, Y.² Takenaka, M.³ Takagi, S.⁴ Nakano, Y.⁵ Sugiyama, M.⁶

8
- 84865276645
- B Kunert K Volz W Stolz 2010 ECS Trans. 28 5
- (2010) ECS Trans. , vol.28 , pp. 5
- Kunert, B.¹ Volz, K.² Stolz, W.³

9
- 77957114254
- 10.1063/1.3491554
- G Wang MR Leys R Loo O Richard H Bender N Waldron G Brammertz J Dekoster W Wang M Seefeldt M Caymax MM Heyns 2010 Appl. Phys. Lett. 97 121913 10.1063/1.3491554
- (2010) Appl. Phys. Lett. , vol.97 , pp. 121913
- Wang, G.¹ Leys, M.R.² Loo, R.³ Richard, O.⁴ Bender, H.⁵ Waldron, N.⁶ Brammertz, G.⁷ Dekoster, J.⁸ Wang, W.⁹ Seefeldt, M.¹⁰ Caymax, M.¹¹ Heyns, M.M.¹²

10
- 84865268947
- S. Lourdudoss, accepted for publication in Curr. Opin. Solid State Mater. Sci. (2012).
- (2012) Curr. Opin. Solid State Mater. Sci.
- Lourdudoss, S.¹

11
- 56349123893
- 10.1063/1.2977754
- F Olsson M Xie S Lourdudoss I Prieto PA Postigo 2008 J. Appl. Phys. 104 093112 10.1063/1.2977754
- (2008) J. Appl. Phys. , vol.104 , pp. 093112
- Olsson, F.¹ Xie, M.² Lourdudoss, S.³ Prieto, I.⁴ Postigo, P.A.⁵

12
- 84865218263
- C Junesand F Olsson Y Xiang M-H Gau S Lourdudoss 2009 Phys. Status Solidi (a) 6 12
- (2009) Phys. Status Solidi (A) , vol.6 , pp. 12
- Junesand, C.¹ Olsson, F.² Xiang, Y.³ Gau, M.-H.⁴ Lourdudoss, S.⁵

13
- 80052330407
- 10.1016/j.jcrysgro.2011.07.022
- W Metaferia C Junesand M-H Gau I Lo G Pozina L Hultman S Lourdudoss 2011 J. Cryst. Growth 332 1 10.1016/j.jcrysgro.2011.07.022
- (2011) J. Cryst. Growth , vol.332 , pp. 1
- Metaferia, W.¹ Junesand, C.² Gau, M.-H.³ Lo, I.⁴ Pozina, G.⁵ Hultman, L.⁶ Lourdudoss, S.⁷

14
- 0030562340
- Y. Morisawa, I. Kikuma, N. Takayama, and M. Takeuchi, Appl. Surf. Sci. 92, 147 (1996).
- (1996) Appl. Surf. Sci. , vol.92 , pp. 147
- Morisawa, Y.¹ Kikuma, I.² Takayama, N.³ Takeuchi, M.⁴

15
- 84865253287
- S Hayashi MB Joshi MS Goorsky 2008 ECS Trans. 16 8
- (2008) ECS Trans. , vol.16 , pp. 8
- Hayashi, S.¹ Joshi, M.B.² Goorsky, M.S.³

16
- 0011086113
- 10.1088/0022-3727/5/1/308 1:CAS:528:DyaE38Xmtleksw%3D%3D
- K Kanaya S Okayama 1972 J. Phys. D 5 43 10.1088/0022-3727/5/1/308 1:CAS:528:DyaE38Xmtleksw%3D%3D
- (1972) J. Phys. D , vol.5 , pp. 43
- Kanaya, K.¹ Okayama, S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.