Accelerated Light-induced Degradation (ALID) for monitoring of defects in PV silicon wafers and solar cells

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 642-647

  Wilson, Marshall ^a   Edelman, Piotr ^a   Savtchouk, Alexandre ^a   D'Amico, John ^a   Findlay, Andrew ^a   Lagowski, Jacek ^a  

^a Semilab SDI LLC   (United States)

Author keywords

Boron oxygen dimmer; Contamination; Defects; Full wafer mapping; Light degradation; Photovoltage; PV; Silicon; Solar cells

Indexed keywords

BAND GAPS; BORON DEFECTS; BORON-OXYGEN; BORON-OXYGEN DIMMER; CRYSTALLINE SILICONS; DEFECT REACTIONS; INTERSTITIAL IRON; LIGHT DEGRADATION; LIGHT-INDUCED DEGRADATION; MINORITY CARRIER LIFETIMES; PHOTO-VOLTAGE; RECOMBINATION CENTERS; SOLAR CELL EFFICIENCIES; SURFACE PHOTOVOLTAGE DIFFUSIONS; THERMAL TREATMENT; WAFER-SCALE;

BORON; BORON COMPOUNDS; CARRIER LIFETIME; DEFECTS; DEGRADATION; HEAT TREATMENT; IRON COMPOUNDS; MAPPING; OLIGOMERS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION; WAVELET TRANSFORMS;

SILICON WAFERS;

EID: 77954624398     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1183-7     Document Type: Article

References (7)

1. J. Lagowski, P. Edelman, and V. Faifer, Recombination Lifetime Measurements in Silicon ed. D. C. Gupta, F. R. Bacher, and W. M. Hughes (West Conshohocken: ASTM STP1340, 1998), p. 125.
2. G. Zoth, Recombination Lifetime Measurements in Silicon, ed. D. C. Gupta, F. R. Bacher, and W. M. Hughes (West Cons- hohocken: ASTM STP1340, 1998), p. 30.
3. L. C. Kimerling and J. L. Benton, Physica B&C 116, 297 (1983).
4. J. Schmidt and K. Bothe, Phys. Rev. B 69, 24107 (2004).
5. J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. Oberg, Phys. Rev. Lett. 93, 055504 (2004).
6. G. Zoth and W. Bergholz, J. Appl. Phys. 67, 6764 (1990).
7. K. Bothe and J. Schmidt, J. Appl. Phys. 99, 013701 (2006).