Photoluminescence imaging of chromium in crystalline silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1701-1705

  Habenicht, Holger ^a   Schubert, Martin C ^a   Coletti, Gianluca ^b   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; CHROMIUM CONCENTRATION; CONTAMINATION LEVELS; CRYSTALLINE SILICONS; DISLOCATION CLUSTERS; ENERGY LEVEL; FORMATION PROCESS; MULTICRYSTALLINE; PHOTOLUMINESCENCE IMAGING; QUANTITATIVE EVALUATION; QUANTITATIVE IMAGES; SPATIALLY RESOLVED; TIME DEPENDENT MEASUREMENTS;

GRAIN BOUNDARIES; METAL CASTINGS; PHOTOVOLTAIC EFFECTS;

CHROMIUM;

EID: 78650086715     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616097     Document Type: Conference Paper

References (22)

1. A. A. Istratov, T. Buonassisi, R. J. McDonald, A. R. Smith, R. Schindler, J. A. Rand, J. P. Kalejs and E. R. Weber, "Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length", Journal of Applied Physics 94, 6552-9, 2003.
2. T. Trupke, R. A. Bardos, M. C. Schubert and W. Warta, "Photoluminescence imaging of silicon wafers", Applied Physics Letters 89, 44107-1-3, 2006.
3. M. Kittler, W. Seifert, K. Schmalz and K. Tittelbach-Helmrich, "Comparison of EBIC and DLTS measurements on boron-doped CZ silicon contaminated with iron", Physica Status Solidi A 96, K133-7, 1986.
4. G. Zoth and W. Bergholz, "A fast, preparation-free method to detect iron in silicon", Journal of Applied Physics 67, 6764-71, 1990.
5. S. Dubois, N. Enjalbert and J.-P. Garandet, "Effects of the compensation level on the carrier lifetime of crystalline silicon", Applied Physics Letters 93, 0321141-3, 2008.
6. D. Macdonald, J. Tan and T. Trupke, "Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence", Journal of Applied Physics 103, 073710-1-7, 2008.
7. S. Rein, Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications. Berlin: Springer, 2005.
8. M. C. Schubert, M. J. Kerler and W. Warta, "Influence of heterogeneous profiles in carrier density measurements with respect to iron concentration measurements in silicon", Journal of Applied Physics 105, 114903-1-6, 2009.
9. G. Coletti, P. C. P. Bronsveld, R. Kvande, L. J. Geerligs and C. C. Swanson, "Effect of Metals in Silicon Feedstock on Multicrystalline Silicon Solar Cells", Arriving to well-founded SoG-feedstock specifications, Amsterdam, The Netherlands, 2008.
10. G. Coletti, P. C. P. Bronsveld, C. Knopf, C. C. Swanson, R. Kvande, L. Arnberg, H. Habenicht and W. Warta, "Impact of iron, nickel and chromium in feedstock on multicrystalline silicon solar cell properties", Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009.
11. G. Coletti, R. Kvande, V. D. Mihailetchi, L. J. Geerligs, L. Arnberg and E. J. Ovrelid, "Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells", Journal of Applied Physics 104, 104913, 2008.
12. H. Reiss, C. S. Fuller and J. J. Morin, "Chemical Interactions Among Defects in Germanium and Silicon", The Bell System Technical Journal 35, 553-636, 1956.
13. H. Nakashima, T. Sadoh, H. Kitagawa and K. Hashimoto, "Diffusion and electrical properties of 3d transition-metal impurity series in silicon", Materials Science Forum 143-147, 761-6, 1994.
14. H. Conzelmann, K. Graff and E. R. Weber," Chromium and chromium-boron pairs in silicon", Applied Physics A: Materials Science & Processing, 1983.
15. J. Zhu, G. Chaussemy and D. Barbier, "Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering", Applied Physics Letters 54, 611-613, 1989.
16. H. Habenicht, M. C. Schubert and W. Warta, "Imaging of chromium point defects in p-type silicon", Journal of Applied Physics, accepted, 2010.
17. R. N. Hall, "Electron-hole recombination in germanium", Physical Review 87, 387, 1952.
18. W. Shockley and W. T. J. Read, "Statistics of the recombinations of holes and electrons", Physical Review 87, 835-42, 1952.
19. J. Schmidt, R. Krain, K. Bothe, G. Pensl and S. Beljakowa, "Recombination activity of interstitial chromium and chromium-boron pairs in silicon", Journal of Applied Physics 102, 123701, 2007.
20. K. Mishra, "Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method", Applied Physics Letters 68, 3281-3, 1996.
21. S. H. Park and D. K. Schroder, "Deep-level impurities in edge-defined film-fed-growth silicon", Journal of Applied Physics 78, 801-10, 1995.
22. M. Blazek, W. Kwapil, J. Schön, W. Warta and G. Coletti, "Gettering variation and lifetime characterization on intentionally iron, nickel and chromium contaminated multicrystalline silicon wafers", Proceedings of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009.