Low-temperature a-Si:H/GaAs Hheterojunction solar cells

IEEE Journal of Photovoltaics

Volumn 1, Issue 1, 2011, Pages 104-107

  Shahrjerdi, Davood ^a   Hekmatshoar, Bahman ^a   Sadana, Devendra K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Heterojunction; photovoltaic solar cells

Indexed keywords

A-SI:H; CELL FABRICATIONS; CELL PERFORMANCE; ELECTRICAL CHARACTERISTIC; GAAS; GAAS SOLAR CELLS; HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); JUNCTION STRUCTURE; LOW COSTS; LOW TEMPERATURE PROCESSING; LOW TEMPERATURES; PHOTOVOLTAIC SOLAR CELLS; SILICON EPITAXY;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; HYDROGEN; SEMICONDUCTING GALLIUM; SILICON; SOLAR CELLS; TEMPERATURE;

HETEROJUNCTIONS;

EID: 84865194889     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2164391     Document Type: Article

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