Picosecond laser ablation of SiO2layers on silicon substrates

Applied Physics A: Materials Science and Processing

Volumn 99, Issue 1, 2010, Pages 151-158

  Hermann, Sonja ^a   Harder, Nils Peter ^a   Brendel, Rolf ^a   Herzog, Dirk ^b   Haferkamp, Heinz ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LASER ZENTRUM HANNOVER E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DIRECT ABSORPTION; FLUENCES; INTENSITY RANGE; LAYER THICKNESS; MELTING THRESHOLD; PEAK INTENSITY; PHOTON ENERGY; PICOSECOND LASER ABLATION; REFLECTED LASER; SHORT-PULSE LASERS; SILICON SUBSTRATES; SILICON WAFER SUBSTRATES; UV WAVELENGTH; VAPORISATION; VAPOUR PRESSURES;

ABSORPTION; LASER ABLATION; LASER PULSES; MELTING; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES;

SILICON WAFERS;

EID: 77953538753     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5464-z     Document Type: Article

References (21)

1. X. Liu, D. Du, G. Mourou, IEEE J. Quantum Electron. 33(10), 1706 (1997).
2. J. Zhao, B. Huettner, A. Menschig, Opt. Laser Technol. 33, 487 (2001).
3. B.N. Chichkov, C. Momma, S. Nolte, F. von Alvensleben, A. Tünnermann, Appl. Phys. A 63, 109 (1996).
4. C. Momma, B.N. Chichkov, S. Nolte, F. von Alvensleben, A. Tünnermann, H. Wellig, B. Wellegehausen, Opt. Commun. 129, 134 (1996).
5. A. Ben-Yakar, R.L. Byer, A. Harkin, J. Ashmore, H.A. Stone, M. Shen, E. Mazur, Appl. Phys. Lett. 83(15), 3030 (2003).
6. A.W. Blakers, A. Wang, A.M. Milne, J. Zhao, M.A. Green, Appl. Phys. Lett. 55(13), 1363 (1989).
7. P. Engelhart, S. Hermann, T. Neubert, H. Plagwitz, R. Grischke, R. Meyer, R. Brendel, U. Klug, A. Schoonderbeek, U. Stute, Prog. Photovolt. Res. Appl. 15, 521 (2007).
8. S. Hermann, P. Engelhart, A. Merkle, T. Neubert, T. Brendemühl, R. Meyer, N.-P. Harder, R. Brendel, Proc. 22nd EU-PVSEC, 970 (2007).
9. S. Hermann, T. Neubert, B. Wolpensinger, N.-P. Harder, R. Brendel, S. Massa, U. Stute, Proc. 22nd EU-PVSEC, 1204 (2008).
10. Y. Okada, Y. Tokumaru, J. Appl. Phys. 56(2), 314 (1984).
11. H. Tada, A.E. Kumpel, R.E. Lathrop, J.B. Slanina, P. Nieva, P. Zavracky, I.N. Miaoulis, P.Y. Wong, J. Appl. Phys. 87(9), 4189 (2000).
12. J.M. Liu, Opt. Lett. 7(5), 196 (1982).
13. D. Du, X. Liu, J. Squier, G. Mourou, Appl. Phys. Lett. 64(23), 3071 (1994).
14. Software SCOUT 2, M. Theiss, Hard- and Software for Optical Spectroscopy, Aachen, Germany.
15. D.F. Edwards, Silicon, in Handbook of Optical Constants of Solids, ed. by E.D. Palik (Academic Press, San Diego, 1985).
16. 2) (Glass), in Handbook of Optical Constants of Solids, ed. by E.D. Palik (Academic Press, San Diego, 1985).
17. P. Engelhart, Laser Processing for High Efficiency Silicon Solar Cells. Proc. SPIE-Laser-based Micro- and Nanopackaging and Assembly III 7202, 72020S11 (2009).
18. D. von der Linde, N. Fabricius, Appl. Phys. Lett. 41(10), 991 (1982).
19. K.D. Li, P.M. Fauchet, Solid State Commun. 61(3), 207 (1987).
20. A. Lietoila, J.F. Gibbons, Appl. Phys. Lett. 40(7), 624 (1981).
21. J.E. Moody, R.H. Hendel, J. Appl. Phys. 53(6), 4364 (1982).