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Volumn 1, Issue 1, 2011, Pages 66-71

Photoluminescence imaging diagnosis of particulate iron contamination derived from hf dip and thermal oxidation

Author keywords

Charge carriers; cleaning; contamination; photoluminescence imaging; silicon

Indexed keywords

CRYSTALLINE SILICONS; CYLINDRICAL COORDINATES; IRON CONTAMINATION; LATERAL FLOW; OUT-DIFFUSION; P-TYPE; PHOTOLUMINESCENCE IMAGING; PL IMAGE; RADIALLY SYMMETRIC; SEMICONDUCTOR EQUATIONS; THERMAL OXIDATION;

EID: 84865161387     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2165699     Document Type: Article
Times cited : (6)

References (11)
  • 1
    • 33746649178 scopus 로고    scopus 로고
    • Photoluminescence imaging of silicon wafers
    • T. Trupke, R. A. Bardos, M. C. Schubert, and W. Warta, "Photoluminescence imaging of silicon wafers," Appl. Phys. Lett., vol. 89, pp. 044107- 1-044107-3, 2006.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 044107-044101
    • Trupke, T.1    Bardos, R.A.2    Schubert, M.C.3    Warta, W.4
  • 3
    • 42149093175 scopus 로고    scopus 로고
    • Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
    • D. Macdonald, J. Tan, and T. Trupke, "Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence," J. Appl. Phys., vol. 103, pp. 073710-1-073710-7, 2008.
    • (2008) J. Appl. Phys. , vol.103 , pp. 073710-073711
    • Macdonald, D.1    Tan, J.2    Trupke, T.3
  • 5
    • 80052317542 scopus 로고    scopus 로고
    • Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging
    • A. Liu, Y.-C. Fan, and D. Macdonald, "Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging," Progr. Photovoltaic: Res. Appl., vol. 19, no. 6, pp. 649-657, 2011.
    • (2011) Progr. Photovoltaic: Res. Appl. , vol.19 , Issue.6 , pp. 649-657
    • Liu, A.1    Fan, Y.-C.2    Macdonald, D.3
  • 8
    • 33749489361 scopus 로고    scopus 로고
    • Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon
    • D. Macdonald, T. Roth, P. N. K. Deenapanray, T. Trupke, and R. A. Bardos, "Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon," Appl. Phys. Lett., vol. 89, pp. 142107-1-142107-3, 2006.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 142107-142101
    • Macdonald, D.1    Roth, T.2    Deenapanray, P.N.K.3    Trupke, T.4    Bardos, R.A.5
  • 10
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • M. J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon," J. Appl. Phys., vol. 91, no. 4, pp. 2473-2480, 2002.
    • (2002) J. Appl. Phys. , vol.91 , Issue.4 , pp. 2473-2480
    • Kerr, M.J.1    Cuevas, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.