High ef?ciency GaN-based light emitting diode with nano-patterned ZnO surface fabricated by wet process

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 7, 2012, Pages 5582-5586

  Oh, Semi ^a   Lee, Sung Nam ^a   Cho, Soohaeng ^b   Kim, Kyoung Kook ^a  

^a Korea Polytechnic University   (South Korea)

^b Yonsei University Wonju   (South Korea)

Author keywords

Light Emitting Diodes; Wet Process; ZnO Surface Nano Patterning

Indexed keywords

BI-LAYER; BI-LAYER STRUCTURE; CRYSTAL MORPHOLOGIES; CURRENT SPREADING; GA-DOPED ZNO; INDIUM TIN OXIDE; INJECTION CURRENTS; LIGHT EXTRACTION; NANO PATTERN; NANOPATTERNING; OPTICAL OUTPUT POWER; OPTOELECTRONIC PROPERTIES; P-TYPE; TRANSPARENT CONDUCTING ELECTRODES; WET PROCESS; ZNO SURFACE;

CRYSTALLOGRAPHY; DEGRADATION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; TIN; TIN OXIDES; WET ETCHING; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84865148491     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6250     Document Type: Article

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