Formation of ZnO nanocones using wet chemical etching of ZnO nanorods in an aqueous solution of HCI

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 12, 2009, Pages 7398-7401

  Bae, Joonho ^a   Shim, Ee Le ^b   Park, T Y ^b   Kang, C J ^b   Choi, Young Jin ^b  

^a Georgia Institute of Technology   (United States)

^b Myong Ji University   (South Korea)

Author keywords

Chemical etching; HCL aq ; Nanocones; Nanorods; ZnO

Indexed keywords

A-PLANE; AQUEOUS SOLUTIONS; CHEMICAL ETCHING; CRYSTAL PLANES; ETCHED SIDEWALLS; ETCHING PROCESS; ETCHING TIME; GEOMETRICAL ANALYSIS; HCL [AQ]; HEXAGONAL SHAPES; HYDROTHERMAL METHODS; MORPHOLOGY FORMATION; NANOCONE; NANOCONES; SI(1 0 0); SINGLE-CRYSTALLINE; WET-CHEMICAL ETCHING; ZNO; ZNO NANOROD;

ANISOTROPIC ETCHING; ELECTRIC CURRENTS; MORPHOLOGY; NANORODS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

WET ETCHING;

EID: 70350214670     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1763     Document Type: Conference Paper

References (27)

1. Y. Tak and K. J. Yong, J. Phys. Chem. B 109, 19263 (2005).
2. C. L. Cheng, C. C. Chen, H. Y. Lin, T. T. Chen, S. C. Lioun, M. W. Chu, R. S. Chen, and Y. F. Chen, J. Nanosci. Nanotechnol. 8, 6344 (2008).
3. M. Law, L. E. Greene, J. C. Johnson, R. Saykally, and P. D. Yang, Nature Mater. 4, 455 (2005).
4. S. H. Eom, S. Senthilarasu, S. C. Yoon, J. Lee, and S. H. Lee, J. Nanosci. Nanotechnol. 8, 5113 (2008).
5. Z. Y. Fan, D. W. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, Appl. Phys. Lett. 85, 5923 (2004).
6. Z. Zhang, H. Yuan, J. Zhou, D. Liu, S. Luo, Y. Miao, Y. Gao, J. Wang, L. Liu, L. Song, Y. Xiang, X. Zhao, W. Zhou, and S. Xie, J. Phys. Chem. B 110, 8566 (2006).
7. T. J. Hsueh, C. L. Hsu, S. J. Chang, C. Y. Lu, Y. R. Lin, and I. C. Chen, J. Nanosci. Nanotechnol. 7, 1076 (2007).
8. X. D. Wang, J. H. Song, J. Liu, and Z. L. Wang, Science 316, 102 (2007).
9. Y. W. Zhu, H. Z. Zhang, X. C. Sun, S. Q. Feng, J. Xu, Q. Zhao, B. Xiang, R. M. Wang, and D. P. Yu, Appl. Phys. Lett. 83, 144 (2003).
10. J. B. Cui, C. P. Daghlian, U. J. Gibson, R. Pusche, P. Geithner, and L. Ley, J. Appl. Phys. 97, 044315 (2005).
11. S. Y. Li, P. Lin, C. Y. Lee, and T. Y. Tseng, J. Appl. Phys. 95, 3711 (2004).
12. A. Wei, X. W. Sun, C. X. Xu, Z. L. Dong, M. B. Yu, and W. Huang, Appl. Phys. Lett. 88, 213102 (2006).
13. X. S. Fang, Y. Bando, U. K. Gautam, C. Ye, and D. Golberg, J. Mater. Chem. 18, 509 (2008).
14. J. L. Yang, S. J. An, W. I. Park, G. C. Yi, and W. Choi, Adv. Mater. 16, 1661 (2004).
15. Q. Zhao, H. Z. Zhang, Y. W. Zhu, S. Q. Feng, X. C. Sun, J. Xu, and D. P. Yu, Appl. Phys. Lett. 86, 203115 (2005).
16. Y. C. Chang and L. J. Chen, J. Phys. Chem. C 111, 1268 (2007).
17. J. J. Chen, M. H. Yu, W. L. Zhou, K. Sun, and L. M. Wang, Appl. Phys. Lett. 87, 173119 (2005).
18. Y. Sun and M. N. R. Ashfold, Nanotechnology 18, 245701 (2007).
19. B. S. Panwar, Appl. Phys. Lett. 80, 1832 (2002).
20. M. Matsuoka, J. J. Appl. Phys. 10, 736 (1971).
21. K. Mukae, K. Tsuda, and I. Nagasawa, J. J. Appl. Phys. 16, 1361 (1977).
22. N. Ohashi, N. Ebisawa, T. Sekiguchi, I. Sakaguchi, Y. Wada, T. Takenaka, and H. Haneda, Appl. Phys. Lett. 86, 091902 (2005).
23. J. Zhu, N. W. Emanetoglu, Y. Chen, B. V. Yakshinskiy, and Y. Lu, J. Electron. Mater. 33, 556 (2004).
24. L. Vayssieres, Adv. Mater. 15, 464 (2003).
25. N. Ohashi, K. Takahashi, S. Hishita, I. Sakaguchi, H. Funakubo, and H. Haneda, J. Electrochem. Soc. 154, D82 (2007).
26. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. F. Zhang, R. J. Saykally, and P. D. Yang, Angew. Chem. Int. Edit. 42, 3031 (2003).
27. C. H. Ye, X. S. Fang, Y. F. Hao, X. M. Teng, and L. D. Zhang, J. Phys. Chem. B 109, 19758 (2005).