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Volumn , Issue , 2012, Pages 724-729

BSIM6: Symmetric bulk MOSFET model

Author keywords

Analog; BSIM4; BSIM6; Compact model; MOS FET; RF; Symmetry

Indexed keywords

ANALOG; BSIM4; BSIM6; COMPACT MODEL; MOS-FET; RF;

EID: 84864929712     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (20)
  • 2
    • 84864943411 scopus 로고    scopus 로고
    • Free Standard SPICE Model Supported by University Partners
    • Chenming Hu and Christian Enz, "Free Standard SPICE Model Supported by University Partners", GSA forum Article, March 2012.
    • GSA Forum Article, March 2012.
    • Hu, C.1    Enz, C.2
  • 12
    • 34047135494 scopus 로고    scopus 로고
    • BSIM5: An advanced charge-based MOS-FET model for nanoscale VLSI circuit simulation
    • J. He, X. Xi, H. Wan, M. Dunga, M. Chan, A. M. Niknejad, "BSIM5: An advanced charge-based MOS-FET model for nanoscale VLSI circuit simulation", Solid-State Electronics, pages 433-444, 2007.
    • (2007) Solid-State Electronics , pp. 433-444
    • He, J.1    Xi, X.2    Wan, H.3    Dunga, M.4    Chan, M.5    Niknejad, A.M.6
  • 13
    • 0037395540 scopus 로고    scopus 로고
    • Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model
    • J.-M. Sallese, M. Bucher, F. Krummenacher, P. Fazan, "Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model", Solid-State Electronics, pages 677-683, 2003.
    • (2003) Solid-State Electronics , pp. 677-683
    • Sallese, J.-M.1    Bucher, M.2    Krummenacher, F.3    Fazan, P.4
  • 19
    • 0019047201 scopus 로고
    • Transient analysis of MOS transistors
    • S.-Y. Oh, D. Ward, and R. Dutton, Transient analysis of MOS transistors, IEEE Trans. Electron Devices, vol. 27, no. 8, pp. 15711578, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.27 , Issue.8 , pp. 15711578
    • Oh, S.-Y.1    Ward, D.2    Dutton, R.3
  • 20
    • 33846100229 scopus 로고    scopus 로고
    • Validation of MOSFET model Source -Drain Symmetry
    • C. C. McAndrew, Validation of MOSFET model Source -Drain Symmetry, IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2202-2206, 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 2202-2206
    • McAndrew, C.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.