Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation

2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Volumn , Issue , 2012, Pages

  Khandelwal, S ^a,b   Chauhan, Y S ^b   Karim, M A ^b   Venugopalan, S ^b   Sachid, A ^b   Niknejad, A ^b   Hu, C ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Body Bias Effect; BSIM6; Compact Models; Vertical Non uniform Doping

Indexed keywords

ANALYSIS AND MODELING; BODY BIAS; BSIM6; COMPACT MODEL; DEVICE CHARACTERISTICS; EXPERIMENTAL DATA; MODEL FRAMEWORK; MODELING METHODOLOGY; MOSFETS; NON-UNIFORM DOPING; TCAD SIMULATION;

CIRCUIT SIMULATION; MOSFET DEVICES;

COMPUTER SIMULATION;

EID: 84861012176     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCDCS.2012.6188935     Document Type: Conference Paper

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