Preparation and properties of SnO2 film deposited by magnetron sputtering

International Journal of Photoenergy

Volumn 2012, Issue , 2012, Pages

  Leng, Dan ^a   Wu, Lili ^a   Jiang, Hongchao ^a   Zhao, Yu ^a   Zhang, Jingquan ^a   Li, Wei ^a   Feng, Lianghuan ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; ENERGY GAP; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; TIN OXIDES;

CDTE/CDS; EFFECT OF OXYGEN; ELECTRICAL MEASUREMENT; HIGH RESISTIVITY; MAGNETRON-SPUTTERING; OXYGEN PARTIAL PRESSURE; PERFORMANCE; PROPERTY; R.F. MAGNETRON SPUTTERING; SNO2 FILMS;

FILM PREPARATION;

EID: 84864921129     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2012/235971     Document Type: Article

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