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Volumn 520, Issue 21, 2012, Pages 6459-6462

Epitaxial thin films of topological insulator Bi 2Te 3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition

(8) Zhang, S X a Yan, L a Qi, J a Zhuo, M a Wang, Y Q b Prasankumar, R P a Jia, Q X a Picraux, S T a

a LOS ALAMOS NATIONAL LABORATORY (United States)

b LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

Bismuth telluride; Epitaxial thin films; Pulsed laser deposition; Topological insulators; Weak anti localization effect

Indexed keywords

ANTI-LOCALIZATION EFFECTS; BISMUTH TELLURIDE; EPITAXIAL THIN FILMS; FERROMAGNETIC OXIDES; GROWTH TECHNIQUES; HIGH QUALITY; INTERFACIAL COUPLINGS; LONGITUDINAL OPTICAL PHONONS; LOW TEMPERATURES; METALLIC BEHAVIORS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SILICON (111) SUBSTRATES; STRUCTURAL CHARACTERIZATION; TIME-RESOLVED REFLECTIVITIES; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS; EPITAXIAL FILMS; HETEROJUNCTIONS; HIGH TEMPERATURE SUPERCONDUCTORS; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84864766722 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.07.012 Document Type: Article

Times cited : (52)

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