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Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 3, 2012, Pages

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO 2 interface

(4) Baena, A a Saraiva, A L b Koiller, Belita b Calderon M J a

a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

b FEDERAL UNIVERSITY OF RIO DE JANEIRO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84864616670 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.86.035317 Document Type: Article

Times cited : (11)

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