Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 19, 2010, Pages

  Debernardi, A ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955596717     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.195302     Document Type: Article

References (31)

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27. Strictly speaking this is proved to be valid for NC with radii up to 3 nm, that is, the larger size considered in Ref.. However, we can reasonably assume also for NCs of larger size that the configuration with P located in the central region of the NC is energetically favored with respect to the one with P close to the NC surface.
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